IRF5851TR Tech Spezifikatioune
Infineon Technologies - IRF5851TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF5851TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1.25V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-TSOP | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.7A, 4.5V | |
| Power - Max | 960mW | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.7A, 2.2A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | IRF58 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | RoHS net konform |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF5851TR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF5851TR | IRF5810TR | IRF5850TRPBF | IRF5851TRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Entworf fir Source Voltage (Vdss) | 20V | 20V | 20V | 20V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (th) (Max) @ Id | 1.25V @ 250µA | 1.2V @ 250µA | 1.2V @ 250µA | 1.25V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power - Max | 960mW | 960mW | 960mW | 960mW |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Basis Produktnummer | IRF58 | IRF58 | IRF58 | IRF58 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V | 9.6nC @ 4.5V | 5.4nC @ 4.5V | 6nC @ 4.5V |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.7A, 2.2A | 2.9A | 2.2A | 2.7A, 2.2A |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.7A, 4.5V | 90mOhm @ 2.9A, 4.5V | 135mOhm @ 2.2A, 4.5V | 90mOhm @ 2.7A, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V | 650pF @ 16V | 320pF @ 15V | 400pF @ 15V |
| Konfiguratioun | N and P-Channel | 2 P-Channel (Dual) | 2 P-Channel (Dual) | N and P-Channel |
| Supplier Device Package | 6-TSOP | 6-TSOP | 6-TSOP | 6-TSOP |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Eroflueden IRF5851TR PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF5851TR - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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