AUIRFSL8405 Tech Spezifikatioune
International Rectifier - AUIRFSL8405 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - AUIRFSL8405
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.9V @ 100µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-262 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V | |
Power Dissipation (Max) | 163W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 5193 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 161 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier AUIRFSL8405.
Produktiounsattriff | ||||
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Part Number | AUIRFSL8405 | AUIRFU4104 | AUIRFS8409-7P | AUIRFS8409TRL |
Hiersteller | International Rectifier | International Rectifier | Infineon Technologies | Infineon Technologies |
Gate Charge (Qg) (Max) @ Vgs | 161 nC @ 10 V | 89 nC @ 10 V | 460 nC @ 10 V | 450 nC @ 10 V |
Package protegéieren | Bulk | Bulk | Tube | Tape & Reel (TR) |
Supplier Device Package | TO-262 | PG-TO-251-3-21 | D2PAK (7-Lead) | PG-TO263-3 |
Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Input Capacitance (Ciss) (Max) @ Vds | 5193 pF @ 25 V | 2950 pF @ 25 V | 13975 pF @ 25 V | 14240 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V | 5.5mOhm @ 42A, 10V | 0.75mOhm @ 100A, 10V | 1.2mOhm @ 100A, 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 163W (Tc) | 140W (Tc) | 375W (Tc) | 375W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 42A (Tc) | 240A (Tc) | 195A (Tc) |
Serie | HEXFET® | Automotive, AEC-Q101, HEXFET® | HEXFET® | HEXFET® |
Vgs (th) (Max) @ Id | 3.9V @ 100µA | 4V @ 250µA | 3.9V @ 250µA | 3.9V @ 250µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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