AUIRFSA8409-7P Tech Spezifikatioune
Infineon Technologies - AUIRFSA8409-7P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - AUIRFSA8409-7P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.9V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-7 | |
Serie | Automotive, AEC-Q101, HEXFET® | |
Rds On (Max) @ Id, Vgs | 0.69mOhm @ 100A, 10V | |
Power Dissipation (Max) | 375W (Tc) | |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 13975 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 460 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 523A (Tc) | |
Basis Produktnummer | AUIRFSA8409 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies AUIRFSA8409-7P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | AUIRFSA8409-7P | AUIRFS8409TRL | AUIRFS8408 | AUIRFSL4310 |
Hiersteller | Infineon Technologies | Infineon Technologies | International Rectifier | International Rectifier |
Rds On (Max) @ Id, Vgs | 0.69mOhm @ 100A, 10V | 1.2mOhm @ 100A, 10V | 1.6mOhm @ 100A, 10V | 7mOhm @ 75A, 10V |
Serie | Automotive, AEC-Q101, HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Basis Produktnummer | AUIRFSA8409 | AUIRF8409 | IRFS8408 | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
Package protegéieren | Tube | Tape & Reel (TR) | Bulk | Bulk |
Vgs (th) (Max) @ Id | 3.9V @ 250µA | 3.9V @ 250µA | 3.9V @ 250µA | 4V @ 250µA |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 523A (Tc) | 195A (Tc) | 195A (Tc) | 75A (Tc) |
Power Dissipation (Max) | 375W (Tc) | 375W (Tc) | 294W (Tc) | 300W (Tc) |
Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 40 V | 100 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 13975 pF @ 25 V | 14240 pF @ 25 V | 10820 pF @ 25 V | 7670 pF @ 50 V |
Gate Charge (Qg) (Max) @ Vgs | 460 nC @ 10 V | 450 nC @ 10 V | 324 nC @ 10 V | 250 nC @ 10 V |
Supplier Device Package | PG-TO263-7 | PG-TO263-3 | D2PAK | TO-262 |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (Max) | ±20V | ±20V | ±20V | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden AUIRFSA8409-7P PDF DataDhusts an Infineon Technologies Dokumentatioun fir AUIRFSA8409-7P - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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