AUIRFSL8403 Tech Spezifikatioune
International Rectifier - AUIRFSL8403 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - AUIRFSL8403
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.9V @ 100µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-262 | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 70A, 10V | |
| Power Dissipation (Max) | 99W (Tc) | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3183 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 123A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier AUIRFSL8403.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | AUIRFSL8403 | AUIRFU4292 | AUIRFSL8408 | AUIRFU540Z |
| Hiersteller | International Rectifier | International Rectifier | International Rectifier | Infineon Technologies |
| Vgs (Max) | ±20V | ±20V | - | ±20V |
| Vgs (th) (Max) @ Id | 3.9V @ 100µA | 5V @ 50µA | 3.9V @ 250µA | 4V @ 50µA |
| Power Dissipation (Max) | 99W (Tc) | 100W (Tc) | 294W (Tc) | 91W (Tc) |
| Supplier Device Package | TO-262 | I-PAK | TO-262 | I-PAK |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 40 V | 250 V | 40 V | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V | 20 nC @ 10 V | 324 nC @ 10 V | 59 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-251-3 Short Leads, IPak, TO-251AA |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 3183 pF @ 25 V | 705 pF @ 25 V | 10820 pF @ 25 V | 1690 pF @ 25 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Package protegéieren | Bulk | Bulk | Bulk | Tube |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 123A (Tc) | 9.3A (Tc) | 195A (Tc) | 35A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 70A, 10V | 345mOhm @ 5.6A, 10V | 1.6mOhm @ 100A, 10V | 28.5mOhm @ 21A, 10V |
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AUIRFSA8409-7PInfineon TechnologiesMOSFET N-CH 40V 523A D2PAKAUIRFSL8405International RectifierMOSFET N-CH 40V 120A TO262
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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