RFP30N06LE Tech Spezifikatioune
onsemi - RFP30N06LE technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - RFP30N06LE
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | +10V, -8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 30A, 5V | |
| Power Dissipation (Max) | 96W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Ta) | |
| Basis Produktnummer | RFP30 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi RFP30N06LE.
| Produktiounsattriff |  |
|
|
 |
|---|---|---|---|---|
| Part Number | RFP30N06LE | RFP3055LE | RFP30P05 | RFP2N15 |
| Hiersteller | onsemi | onsemi | onsemi | Harris Corporation |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 3V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Power Dissipation (Max) | 96W (Tc) | 38W (Tc) | - | 25W (Tc) |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | -55°C ~ 150°C (TJ) |
| Vgs (Max) | +10V, -8V | ±16V | - | ±20V |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 50 V | 150 V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Ta) | 11A (Tc) | 30A (Tc) | 2A (Tc) |
| FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V | 11.3 nC @ 10 V | 170 nC @ 20 V | - |
| Package protegéieren | Tube | Tube | Tube | Bulk |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V | 350 pF @ 25 V | 3200 pF @ 25 V | 200 pF @ 25 V |
| Basis Produktnummer | RFP30 | RFP30 | RFP30 | - |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | 5V | - | 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 30A, 5V | 107mOhm @ 8A, 5V | 65mOhm @ 30A, 10V | 1.75Ohm @ 2A, 10V |
| Serie | - | - | - | - |
Eroflueden RFP30N06LE PDF DataDhusts an onsemi Dokumentatioun fir RFP30N06LE - onsemi.
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RFP47N10Intersil (Renesas Electronics Corporation)RFP45N06Fairchild SemiconductorMOSFET N-CH 60V 45A TO220-3RFP2N08LVBSEMIRFP30N06EFairchild (onsemi)RFP30N05| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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