RFP3055LE Tech Spezifikatioune
onsemi - RFP3055LE technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - RFP3055LE
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±16V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 107mOhm @ 8A, 5V | |
| Power Dissipation (Max) | 38W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | |
| Basis Produktnummer | RFP30 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi RFP3055LE.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | RFP3055LE | RFP2N15 | RFP30P06 | RFP40N10 |
| Hiersteller | onsemi | Harris Corporation | onsemi | onsemi |
| Power Dissipation (Max) | 38W (Tc) | 25W (Tc) | - | 160W (Tc) |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 107mOhm @ 8A, 5V | 1.75Ohm @ 2A, 10V | 65mOhm @ 30A, 10V | 40mOhm @ 40A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 5V | 10V | - | 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 60 V | 150 V | 60 V | 100 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| FET Feature | - | - | - | - |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Serie | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V | - | 170 nC @ 20 V | 300 nC @ 20 V |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Vgs (Max) | ±16V | ±20V | - | ±20V |
| Package protegéieren | Tube | Bulk | Tube | Tube |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 175°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | 200 pF @ 25 V | 3200 pF @ 25 V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 2A (Tc) | 30A (Tc) | 40A (Tc) |
| Basis Produktnummer | RFP30 | - | RFP30 | RFP40 |
Eroflueden RFP3055LE PDF DataDhusts an onsemi Dokumentatioun fir RFP3055LE - onsemi.
RFP30N05RFP2N15Harris CorporationN-CHANNEL, MOSFETRFP25P06INTESILRFP25N05L F25N05LHARRISRFP30P06onsemiMOSFET P-CH 60V 30A TO220-3
RFP25N06Fairchild (onsemi)RFP30N06EFairchild (onsemi)RFP2N12LVBsemiRFP2N20LFairchild (onsemi)RFP40N10onsemiMOSFET N-CH 100V 40A TO220-3RFP25N05LHarris CorporationN-CHANNEL, MOSFETRFP30P06LEVBsemiRFP3055onsemiMOSFET N-CH 60V 12A TO220-3RFP45N06Fairchild SemiconductorMOSFET N-CH 60V 45A TO220-3RFP30N06LEonsemiMOSFET N-CH 60V 30A TO220-3RFP30P05onsemiMOSFET P-CH 50V 30A TO220-3RFP3055LE MOSFairchild (onsemi)RFP2N08LVBSEMI| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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