RFP45N06 Tech Spezifikatioune
onsemi - RFP45N06 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - RFP45N06
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 45A, 10V | |
| Power Dissipation (Max) | 131W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 20 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Tc) | |
| Basis Produktnummer | RFP45 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi RFP45N06.
| Produktiounsattriff |  |
|
 |
|
|---|---|---|---|---|
| Part Number | RFP45N06 | RFP50N05L | RFP50N05 | RFP30P06 |
| Hiersteller | onsemi | onsemi | Harris Corporation | onsemi |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 20 V | 140 nC @ 10 V | 160 nC @ 20 V | 170 nC @ 20 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 4V, 5V | 10V | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Tc) | 50A (Tc) | 50A (Tc) | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 45A, 10V | 22mOhm @ 50A, 5V | 22mOhm @ 50A, 10V | 65mOhm @ 30A, 10V |
| FET Feature | - | - | - | - |
| Package protegéieren | Tube | Tube | Bulk | Tube |
| Entworf fir Source Voltage (Vdss) | 60 V | 50 V | 50 V | 60 V |
| Basis Produktnummer | RFP45 | RFP50 | - | RFP30 |
| Serie | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 25 V | - | - | 3200 pF @ 25 V |
| Power Dissipation (Max) | 131W (Tc) | 110W (Tc) | 132W (Tc) | - |
| Vgs (Max) | ±20V | ±10V | ±20V | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | - |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220AB | TO-220-3 |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 2V @ 250µA | 4V @ 250nA | 4V @ 250µA |
| FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
Eroflueden RFP45N06 PDF DataDhusts an onsemi Dokumentatioun fir RFP45N06 - onsemi.
RFP3055LE MOSFairchild (onsemi)RFP50N05LonsemiMOSFET N-CH 50V 50A TO220-3RFP50N05Harris CorporationN-CHANNEL POWER MOSFETRFP30N06EFairchild (onsemi)RFP30P06onsemiMOSFET P-CH 60V 30A TO220-3RFP45N06 MOSFairchild (onsemi)RFP4N05LS2515RFP30P05onsemiMOSFET P-CH 50V 30A TO220-3RFP4N05LFairchild Semiconductor4A, 50V, 0.8OHM, N-CHANNEL MOSFERFP4N100onsemiMOSFET N-CH 1000V 4.3A TO220-3RFP30N05RFP30N06LEonsemiMOSFET N-CH 60V 30A TO220-3
RFP47N10Intersil (Renesas Electronics Corporation)RFP40N10onsemiMOSFET N-CH 100V 40A TO220-3RFP30P06LEVBsemiRFP45N06Fairchild SemiconductorMOSFET N-CH 60V 45A TO220-3RFP4N06LVBSEMIRFP50-5CRFPOWER| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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