NVBG040N120SC1 Tech Spezifikatioune
onsemi - NVBG040N120SC1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NVBG040N120SC1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4.3V @ 10mA | |
Vgs (Max) | +25V, -15V | |
Technologie | SiCFET (Silicon Carbide) | |
Supplier Device Package | D2PAK-7 | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 56mOhm @ 35A, 20V | |
Power Dissipation (Max) | 357W (Tc) | |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1789 pF @ 800 V | |
Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 20 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 20V | |
Entworf fir Source Voltage (Vdss) | 1200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | |
Basis Produktnummer | NVBG040 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NVBG040N120SC1.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NVBG040N120SC1 | NVB082N65S3F | BTS113AE3045ANTMA1 | NVB25P06T4G |
Hiersteller | onsemi | onsemi | Infineon Technologies | onsemi |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | 40A (Tc) | 11.5A (Tc) | 27.5A (Ta) |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Power Dissipation (Max) | 357W (Tc) | 313W (Tc) | 40W (Tc) | 120W (Tj) |
Technologie | SiCFET (Silicon Carbide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Basis Produktnummer | NVBG040 | NVB082 | - | NVB25P |
Entworf fir Source Voltage (Vdss) | 1200 V | 650 V | 60 V | 60 V |
Rds On (Max) @ Id, Vgs | 56mOhm @ 35A, 20V | 82mOhm @ 20A, 10V | 170mOhm @ 5.8A, 4.5V | 82mOhm @ 25A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 20V | 10V | 4.5V | 10V |
Vgs (Max) | +25V, -15V | ±30V | ±10V | ±15V |
Vgs (th) (Max) @ Id | 4.3V @ 10mA | 5V @ 4mA | 2.5V @ 1mA | 4V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 1789 pF @ 800 V | 3410 pF @ 400 V | 560 pF @ 25 V | 1680 pF @ 25 V |
FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
FET Feature | - | - | - | - |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101, SuperFET® III, FRFET® | TEMPFET® | Automotive, AEC-Q101 |
Supplier Device Package | D2PAK-7 | D²PAK-3 (TO-263-3) | TO-220AB | D²PAK |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 20 V | 81 nC @ 10 V | - | 50 nC @ 10 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden NVBG040N120SC1 PDF DataDhusts an onsemi Dokumentatioun fir NVBG040N120SC1 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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