NVB25P06T4G Tech Spezifikatioune
onsemi - NVB25P06T4G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NVB25P06T4G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±15V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 82mOhm @ 25A, 10V | |
Power Dissipation (Max) | 120W (Tj) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 27.5A (Ta) | |
Basis Produktnummer | NVB25P |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NVB25P06T4G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NVB25P06T4G | NVBG040N120SC1 | NVB082N65S3F | STP34N65M5 |
Hiersteller | onsemi | onsemi | onsemi | STMicroelectronics |
Entworf fir Source Voltage (Vdss) | 60 V | 1200 V | 650 V | 650 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101, SuperFET® III, FRFET® | MDmesh™ V |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | 106 nC @ 20 V | 81 nC @ 10 V | 62.5 nC @ 10 V |
FET Feature | - | - | - | - |
Supplier Device Package | D²PAK | D2PAK-7 | D²PAK-3 (TO-263-3) | TO-220 |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 27.5A (Ta) | 60A (Tc) | 40A (Tc) | 28A (Tc) |
Rds On (Max) @ Id, Vgs | 82mOhm @ 25A, 10V | 56mOhm @ 35A, 20V | 82mOhm @ 20A, 10V | 110mOhm @ 14A, 10V |
Vgs (Max) | ±15V | +25V, -15V | ±30V | ±25V |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4.3V @ 10mA | 5V @ 4mA | 5V @ 250µA |
Power Dissipation (Max) | 120W (Tj) | 357W (Tc) | 313W (Tc) | 190W (Tc) |
Basis Produktnummer | NVB25P | NVBG040 | NVB082 | STP34 |
Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V | 1789 pF @ 800 V | 3410 pF @ 400 V | 2700 pF @ 100 V |
Technologie | MOSFET (Metal Oxide) | SiCFET (Silicon Carbide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 20V | 10V | 10V |
Eroflueden NVB25P06T4G PDF DataDhusts an onsemi Dokumentatioun fir NVB25P06T4G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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