NVB082N65S3F Tech Spezifikatioune
onsemi - NVB082N65S3F technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NVB082N65S3F
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 5V @ 4mA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D²PAK-3 (TO-263-3) | |
| Serie | Automotive, AEC-Q101, SuperFET® III, FRFET® | |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 313W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3410 pF @ 400 V | |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 650 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) | |
| Basis Produktnummer | NVB082 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NVB082N65S3F.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NVB082N65S3F | NVB110N65S3F | NVB25P06T4G | NVBG040N120SC1 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Vgs (Max) | ±30V | ±30V | ±15V | +25V, -15V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Entworf fir Source Voltage (Vdss) | 650 V | 650 V | 60 V | 1200 V |
| Serie | Automotive, AEC-Q101, SuperFET® III, FRFET® | Automotive, AEC-Q101, SuperFET® III, FRFET® | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 20A, 10V | 110mOhm @ 15A, 10V | 82mOhm @ 25A, 10V | 56mOhm @ 35A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V | 58 nC @ 10 V | 50 nC @ 10 V | 106 nC @ 20 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 20V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Supplier Device Package | D²PAK-3 (TO-263-3) | D²PAK-3 (TO-263-3) | D²PAK | D2PAK-7 |
| Power Dissipation (Max) | 313W (Tc) | 240W (Tc) | 120W (Tj) | 357W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) | 30A (Tc) | 27.5A (Ta) | 60A (Tc) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | NVB082 | NVB110 | NVB25P | NVBG040 |
| Input Capacitance (Ciss) (Max) @ Vds | 3410 pF @ 400 V | 2560 pF @ 400 V | 1680 pF @ 25 V | 1789 pF @ 800 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | SiCFET (Silicon Carbide) |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 5V @ 4mA | 5V @ 3mA | 4V @ 250µA | 4.3V @ 10mA |
Eroflueden NVB082N65S3F PDF DataDhusts an onsemi Dokumentatioun fir NVB082N65S3F - onsemi.
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ZXMN10A11KTCDiodes IncorporatedMOSFET N-CH 100V 2.4A TO252-2NVB190N65S3FONsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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