HGT1S14N36G3VLT Tech Spezifikatioune
onsemi - HGT1S14N36G3VLT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - HGT1S14N36G3VLT
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 390 V | |
| Vce (on) (Max) @ Vge, Ic | 2.2V @ 5V, 14A | |
| Test Condition | 300V, 7A, 25Ohm, 5V | |
| Td (on / off) @ 25 ° C | -/7µs | |
| Energie schalten | - | |
| Supplier Device Package | I2PAK (TO-262) | |
| Serie | - | |
| Power - Max | 100 W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -40°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Logic | |
| IGBT Type | - | |
| Gate Charge | 24 nC | |
| Aktuell - Sammler (Ic) (Max) | 18 A | |
| Basis Produktnummer | HGT1S14 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi HGT1S14N36G3VLT.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | HGT1S14N36G3VLT | HGT1S10N120BNST | HGT1S20N60C3R | HGT1S12N60A4DS |
| Hiersteller | onsemi | onsemi | Harris Corporation | onsemi |
| Supplier Device Package | I2PAK (TO-262) | D²PAK (TO-263) | I2PAK (TO-262) | D²PAK (TO-263) |
| Operatioun Temperatur | -40°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | - | - | - | - |
| Power - Max | 100 W | 298 W | 164 W | 167 W |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Energie schalten | - | 320µJ (on), 800µJ (off) | - | 55µJ (on), 50µJ (off) |
| Td (on / off) @ 25 ° C | -/7µs | 23ns/165ns | - | 17ns/96ns |
| Basis Produktnummer | HGT1S14 | HGT1S10 | - | HGT1S12 |
| Input Type | Logic | Standard | Standard | Standard |
| Gate Charge | 24 nC | 100 nC | 116 nC | 78 nC |
| Vce (on) (Max) @ Vge, Ic | 2.2V @ 5V, 14A | 2.7V @ 15V, 10A | 2.2V @ 15V, 20A | 2.7V @ 15V, 12A |
| Test Condition | 300V, 7A, 25Ohm, 5V | 960V, 10A, 10Ohm, 15V | - | 390V, 12A, 10Ohm, 15V |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
| Voltage - Collector Emitter Breakdown (Max) | 390 V | 1200 V | 600 V | 600 V |
| IGBT Type | - | NPT | - | - |
| Aktuell - Sammler (Ic) (Max) | 18 A | 35 A | 40 A | 54 A |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tube |
Eroflueden HGT1S14N36G3VLT PDF DataDhusts an onsemi Dokumentatioun fir HGT1S14N36G3VLT - onsemi.
HGT1S10N120BNSTonsemiIGBT 1200V 35A 298W TO263ABHGT1S20N60C3RHarris Corporation40A, 600V, RUGGED N-CHANNEL IGBTHGT1S14N40F3VLSFSCHGT1S12N60A4DSonsemiIGBT 600V 54A 167W D2PAKHGT1S20N36G3VLSR4737INTERSIL/FAIRCHILD
HGT1S14N36G3VLTFairchild SemiconductorN-CHANNEL IGBTHGT1S20N60A4S9AonsemiIGBT 600V 70A 290W TO263ABHGT1S10N120BNST##QQQQQQQQHGT1S12N60A4S9AHGT1S14N41G3VLS9AFairchild (onsemi)HGT1S12N60B3SHarris Corporation27A, 600V, UFS N-CHANNEL IGBTHGT1S14N36G3VLFairchild (onsemi)HGT1S14N41G3VLSR4874Fairchild (onsemi)HGT1S12N60C3DS9AFairchild (onsemi)HGT1S20N36G3VLSFairchild SemiconductorIGBT, 37.7A, 355V, N-CHANNELHGT1S12N60A4DSFairchild SemiconductorIGBT, 54A, 600V, N-CHANNEL, TO-2HGT1S14N40G3VLSFairchild (onsemi)HGT1S12N60C3DSFairchild SemiconductorIGBT, 24A, 600V, N-CHANNEL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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