HGT1S12N60B3S Tech Spezifikatioune
Harris Corporation - HGT1S12N60B3S technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - HGT1S12N60B3S
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce (on) (Max) @ Vge, Ic | 2.1V @ 15V, 12A | |
| Test Condition | 480V, 12A, 25Ohm, 15V | |
| Td (on / off) @ 25 ° C | 26ns/150ns | |
| Energie schalten | 304µJ (on), 250µJ (off) | |
| Supplier Device Package | D2PAK (TO-263) | |
| Serie | - | |
| Power - Max | 104 W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Type | Standard | |
| IGBT Type | - | |
| Gate Charge | 68 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 110 A | |
| Aktuell - Sammler (Ic) (Max) | 27 A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation HGT1S12N60B3S.
| Produktiounsattriff | |
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|---|---|---|---|---|
| Part Number | HGT1S12N60B3S | HGT1S12N60C3DS | HGT1S12N60A4DS | HGT1S10N120BNST |
| Hiersteller | Harris Corporation | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
| IGBT Type | - | - | - | NPT |
| Gate Charge | 68 nC | 71 nC | 120 nC | 100 nC |
| Test Condition | 480V, 12A, 25Ohm, 15V | - | 390V, 12A, 10Ohm, 15V | 960V, 10A, 10Ohm, 15V |
| Power - Max | 104 W | 104 W | 167 W | 298 W |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Serie | - | - | - | - |
| Vce (on) (Max) @ Vge, Ic | 2.1V @ 15V, 12A | 2.2V @ 15V, 15A | 2.7V @ 15V, 12A | 2.7V @ 15V, 10A |
| Aktuell - Sammler (Ic) (Max) | 27 A | 24 A | 54 A | 35 A |
| Input Type | Standard | Standard | Standard | Standard |
| Supplier Device Package | D2PAK (TO-263) | TO-263AB | TO-263AB | D²PAK (TO-263) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Energie schalten | 304µJ (on), 250µJ (off) | - | 55µJ (on), 50µJ (off) | 320µJ (on), 800µJ (off) |
| Aktuell - Sammler Pulséiert (Icm) | 110 A | 96 A | 96 A | 80 A |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V | 600 V | 1200 V |
| Package protegéieren | Bulk | Bulk | Bulk | Tape & Reel (TR) |
| Td (on / off) @ 25 ° C | 26ns/150ns | - | 17ns/96ns | 23ns/165ns |
HGT1S12N60A4S9AHGT1S12N60C3DSFairchild SemiconductorIGBT, 24A, 600V, N-CHANNELHGT1S12N60A4DSFairchild SemiconductorIGBT, 54A, 600V, N-CHANNEL, TO-2HGT1S10N120BNSTonsemiIGBT 1200V 35A 298W TO263ABHGT1S10N120BNST##QQQQQQQQHGT1S14N40F3VLSFSCHGT1S14N41G3VLSR4874Fairchild (onsemi)HGT1S14N36G3VLTFairchild SemiconductorN-CHANNEL IGBTHGT1S12N60C3DS9AFairchild (onsemi)HGT1N30N60A4DFairchild SemiconductorIGBT, 96A, 600V, N-CHANNEL
HGT1N40N60A4DonsemiIGBT MOD 600V 110A 298W SOT227BHGT1S14N36G3VLFairchild (onsemi)HGT1S12N60A4DSonsemiIGBT 600V 54A 167W D2PAKHGT1S14N36G3VLTonsemiIGBT 390V 18A 100W TO262AAHGT1S14N40G3VLSFairchild (onsemi)HGT1S14N41G3VLS9AFairchild (onsemi)HGT1S10N120BNSFairchild SemiconductorIGBT, 35A, 1200V, N-CHANNEL, TO-HGT1S10N120BNSonsemiIGBT 1200V 35A 298W TO263AB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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