HGT1S12N60A4DS Tech Spezifikatioune
onsemi - HGT1S12N60A4DS technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - HGT1S12N60A4DS
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Voltage - Collector Emitter Breakdown (Max) | 600 V | |
Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A | |
Test Condition | 390V, 12A, 10Ohm, 15V | |
Td (on / off) @ 25 ° C | 17ns/96ns | |
Energie schalten | 55µJ (on), 50µJ (off) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | - | |
Reverse Recovery Time (trr) | 30 ns | |
Power - Max | 167 W |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube | |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Type | Standard | |
IGBT Type | - | |
Gate Charge | 78 nC | |
Aktuell - Sammler Pulséiert (Icm) | 96 A | |
Aktuell - Sammler (Ic) (Max) | 54 A | |
Basis Produktnummer | HGT1S12 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi HGT1S12N60A4DS.
Produktiounsattriff | ||||
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Part Number | HGT1S12N60A4DS | HGT1S10N120BNST | HGT1S10N120BNS | HGT1S12N60C3DS |
Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
Reverse Recovery Time (trr) | 30 ns | - | - | 32 ns |
Energie schalten | 55µJ (on), 50µJ (off) | 320µJ (on), 800µJ (off) | 320µJ (on), 800µJ (off) | - |
Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A | 2.7V @ 15V, 10A | 2.7V @ 15V, 10A | 2.2V @ 15V, 15A |
Power - Max | 167 W | 298 W | 298 W | 104 W |
Aktuell - Sammler (Ic) (Max) | 54 A | 35 A | 35 A | 24 A |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Test Condition | 390V, 12A, 10Ohm, 15V | 960V, 10A, 10Ohm, 15V | 960V, 10A, 10Ohm, 15V | - |
Td (on / off) @ 25 ° C | 17ns/96ns | 23ns/165ns | 23ns/165ns | - |
Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) | TO-263AB |
Voltage - Collector Emitter Breakdown (Max) | 600 V | 1200 V | 1200 V | 600 V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Aktuell - Sammler Pulséiert (Icm) | 96 A | 80 A | 80 A | 96 A |
IGBT Type | - | NPT | NPT | - |
Serie | - | - | - | - |
Package protegéieren | Tube | Tape & Reel (TR) | Tube | Bulk |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
Basis Produktnummer | HGT1S12 | HGT1S10 | HGT1S10 | - |
Input Type | Standard | Standard | Standard | Standard |
Gate Charge | 78 nC | 100 nC | 100 nC | 71 nC |
Eroflueden HGT1S12N60A4DS PDF DataDhusts an onsemi Dokumentatioun fir HGT1S12N60A4DS - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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