BBS3002-DL-E Tech Spezifikatioune
onsemi - BBS3002-DL-E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - BBS3002-DL-E
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | - | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SMP-FD | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 5.8mOhm @ 50A, 10V | |
Power Dissipation (Max) | 90W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | |
Basis Produktnummer | BBS300 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi BBS3002-DL-E.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BBS3002-DL-E | FDS8874 | SI4420DYTRPBF | DMTH4007LK3Q-13 |
Hiersteller | onsemi | onsemi | Infineon Technologies | Diodes Incorporated |
Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 20 V | 3990 pF @ 15 V | 2240 pF @ 15 V | 1895 pF @ 30 V |
Rds On (Max) @ Id, Vgs | 5.8mOhm @ 50A, 10V | 5.5mOhm @ 16A, 10V | 9mOhm @ 12.5A, 10V | 7.3mOhm @ 20A, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V | 72 nC @ 10 V | 78 nC @ 10 V | 29.1 nC @ 10 V |
Serie | - | PowerTrench® | HEXFET® | Automotive, AEC-Q101 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | - | 2.5V @ 250µA | 1V @ 250µA | 3V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | 16A (Ta) | 12.5A (Ta) | 16.8A (Ta), 70A (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Basis Produktnummer | BBS300 | FDS88 | - | DMTH4007 |
Supplier Device Package | SMP-FD | 8-SOIC | 8-SO | TO-252-3 |
Power Dissipation (Max) | 90W (Tc) | 2.5W (Ta) | 2.5W (Ta) | 2.6W (Ta) |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Entworf fir Source Voltage (Vdss) | 60 V | 30 V | 30 V | 40 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Eroflueden BBS3002-DL-E PDF DataDhusts an onsemi Dokumentatioun fir BBS3002-DL-E - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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