BBS3002-DL-1E Tech Spezifikatioune
onsemi - BBS3002-DL-1E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - BBS3002-DL-1E
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | - | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 5.8mOhm @ 50A, 10V | |
Power Dissipation (Max) | 90W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | |
Basis Produktnummer | BBS3002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi BBS3002-DL-1E.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BBS3002-DL-1E | BBS3002-DL-E | IRF540NSTRRPBF | AO4304 |
Hiersteller | onsemi | onsemi | Infineon Technologies | Alpha & Omega Semiconductor Inc. |
Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V | 280 nC @ 10 V | 71 nC @ 10 V | 29 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | - | - | 4V @ 250µA | 2.4V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4V, 10V | 10V | 4.5V, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 8-SOIC (0.154", 3.90mm Width) |
Power Dissipation (Max) | 90W (Tc) | 90W (Tc) | 130W (Tc) | 3.6W (Ta) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | 100A (Ta) | 33A (Tc) | 18A (Ta) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | D²PAK (TO-263) | SMP-FD | D2PAK | 8-SOIC |
FET Typ | P-Channel | P-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 5.8mOhm @ 50A, 10V | 5.8mOhm @ 50A, 10V | 44mOhm @ 16A, 10V | 6mOhm @ 15A, 10V |
FET Feature | - | - | - | - |
Basis Produktnummer | BBS3002 | BBS300 | IRF540 | AO43 |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 100 V | 30 V |
Input Capacitance (Ciss) (Max) @ Vds | 13200 pF @ 20 V | 13200 pF @ 20 V | 1960 pF @ 25 V | 1920 pF @ 15 V |
Serie | - | - | HEXFET® | - |
Eroflueden BBS3002-DL-1E PDF DataDhusts an onsemi Dokumentatioun fir BBS3002-DL-1E - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.