NTR1P02LT3G Tech Spezifikatioune
onsemi - NTR1P02LT3G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - NTR1P02LT3G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.25V @ 250µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 750mA, 4.5V | |
| Power Dissipation (Max) | 400mW (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 5 V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.3A (Ta) | |
| Basis Produktnummer | NTR1P02 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi NTR1P02LT3G.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | NTR1P02LT3G | NTR1P02T3G | NTR2101PT1 | NTR2101PT1G |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Basis Produktnummer | NTR1P02 | NTR1P0 | NTR210 | NTR2101 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 4.5V, 10V | 1.8V, 4.5V | 1.8V, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 5 V | 165 pF @ 5 V | 1173 pF @ 4 V | 1173 pF @ 4 V |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 750mA, 4.5V | 180mOhm @ 1.5A, 10V | 52mOhm @ 3.5A, 4.5V | 52mOhm @ 3.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4 V | 2.5 nC @ 5 V | 15 nC @ 4.5 V | 15 nC @ 4.5 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±12V | ±20V | ±8V | ±8V |
| Power Dissipation (Max) | 400mW (Ta) | 400mW (Ta) | 960mW (Ta) | 960mW (Ta) |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 8 V | 8 V |
| Vgs (th) (Max) @ Id | 1.25V @ 250µA | 2.3V @ 250µA | 1V @ 250µA | 1V @ 250µA |
| Serie | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.3A (Ta) | 1A (Ta) | 3.7A (Ta) | 3.7A (Ta) |
Eroflueden NTR1P02LT3G PDF DataDhusts an onsemi Dokumentatioun fir NTR1P02LT3G - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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