1N5402 Tech Spezifikatioune
SMC Diode Solutions - 1N5402 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu SMC Diode Solutions - 1N5402
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Sangdest Microelectronics / Nanjing (SMC Diode Solutions) | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-201AD | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-201AD, Axial |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Cut Tape (CT) | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | 30pF @ 4V, 1MHz | |
| Basis Produktnummer | 1N540 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu SMC Diode Solutions 1N5402.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | 1N5402 | 1N5402-E3/54 | 1N5402G | 1N5402G |
| Hiersteller | SMC Diode Solutions | Vishay General Semiconductor - Diodes Division | SMC Diode Solutions | onsemi |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V | 200 V | 200 V |
| Basis Produktnummer | 1N540 | 1N5402 | 1N540 | 1N5402 |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 200 V | 5 µA @ 200 V | 5 µA @ 200 V | 10 µA @ 200 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -50°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
| Capacitance @ Vr, F. | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.2 V @ 3 A | 1.2 V @ 3 A | 1.1 V @ 3 A | 1 V @ 3 A |
| Package protegéieren | Cut Tape (CT) | Tape & Reel (TR) | Tape & Box (TB) | Bulk |
| Supplier Device Package | DO-201AD | DO-201AD | DO-201AD | Axial |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | DO-201AD, Axial | DO-201AD, Axial | DO-201AD, Axial | DO-201AA, DO-27, Axial |
| Technologie | Standard | Standard | Standard | Standard |
| Serie | - | - | - | - |
Eroflueden 1N5402 PDF DataDhusts an SMC Diode Solutions Dokumentatioun fir 1N5402 - SMC Diode Solutions.
1N5402-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 3A DO201AD1N5402GSMC Diode SolutionsDIODE GEN PURP 200V 3A DO201AD1N5402GonsemiDIODE GEN PURP 200V 3A AXIAL
1N5402-TDiodes IncorporatedDIODE GEN PURP 200V 3A DO201AD1N5402RLonsemiDIODE GEN PURP 200V 3A AXIAL
1N5402Diotec SemiconductorDIODE GEN PURP 200V 3A DO2011N5401GonsemiDIODE GEN PURP 100V 3A AXIAL1N5401RLonsemiDIODE GEN PURP 100V 3A AXIAL1N5402 T/BPANJIT
1N5402onsemiDIODE GEN PURP 200V 3A DO201AD1N5401TRAMI Semiconductor/onsemi1N5402NTE Electronics, IncDIODE GEN PURP 200V 3A DO201AD
1N5402Fairchild SemiconductorDIODE GEN PURP 1V 3A DO2011N5402RLGonsemiDIODE GEN PURP 200V 3A AXIAL1N5402_AY_10001PANJIT
1N5402GTaiwan Semiconductor CorporationDIODE GEN PURP 200V 3A DO201AD1N5401RLGonsemiDIODE GEN PURP 100V 3A AXIAL1N5401GSMC Diode SolutionsDIODE GEN PURP 100V 3A DO201AD| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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