SUG80050E-GE3 Tech Spezifikatioune
Vishay Siliconix - SUG80050E-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SUG80050E-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AC | |
Serie | ThunderFET® | |
Rds On (Max) @ Id, Vgs | 5.4mOhm @ 20A, 10V | |
Power Dissipation (Max) | 500W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 75 V | |
Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 7.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 150 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | |
Basis Produktnummer | SUG80050 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SUG80050E-GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SUG80050E-GE3 | SUD50P06-15L-E3 | STD85N3LH5 | SI7431DP-T1-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | STMicroelectronics | Vishay Siliconix |
Supplier Device Package | TO-247AC | TO-252AA | DPAK | PowerPAK® SO-8 |
Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 75 V | 4950 pF @ 25 V | 1850 pF @ 25 V | - |
Vgs (Max) | ±20V | ±20V | ±22V | ±20V |
FET Typ | N-Channel | P-Channel | N-Channel | P-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | 50A (Tc) | 80A (Tc) | 2.2A (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 150 V | 60 V | 30 V | 200 V |
Rds On (Max) @ Id, Vgs | 5.4mOhm @ 20A, 10V | 15mOhm @ 17A, 10V | 5mOhm @ 40A, 10V | 174mOhm @ 3.8A, 10V |
Serie | ThunderFET® | TrenchFET® | STripFET™ V | TrenchFET® |
FET Feature | - | - | - | - |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Basis Produktnummer | SUG80050 | SUD50 | STD85 | SI7431 |
Package / Case | TO-247-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | PowerPAK® SO-8 |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 4V @ 250µA | 3V @ 250µA | 2.5V @ 250µA | 4V @ 250µA |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | 175°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 7.5V, 10V | 4.5V, 10V | 5V, 10V | 6V, 10V |
Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V | 165 nC @ 10 V | 14 nC @ 5 V | 135 nC @ 10 V |
Power Dissipation (Max) | 500W (Tc) | 3W (Ta), 136W (Tc) | 70W (Tc) | 1.9W (Ta) |
Eroflueden SUG80050E-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SUG80050E-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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