SPB02N60S5ATMA1 Tech Spezifikatioune
Infineon Technologies - SPB02N60S5ATMA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SPB02N60S5ATMA1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 5.5V @ 80µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO263-3-2 | |
| Serie | CoolMOS™ | |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V | |
| Power Dissipation (Max) | 25W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.8A (Tc) | |
| Basis Produktnummer | SPB02N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SPB02N60S5ATMA1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SPB02N60S5ATMA1 | SPB02N60C3 | SPB04N60C3 | SPB03N60S5 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Power Dissipation (Max) | 25W (Tc) | 25W (Tc) | 50W (Tc) | 38W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V | 12.5 nC @ 10 V | 25 nC @ 10 V | 16 nC @ 10 V |
| Basis Produktnummer | SPB02N | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V | 200 pF @ 25 V | 490 pF @ 25 V | 420 pF @ 25 V |
| Vgs (th) (Max) @ Id | 5.5V @ 80µA | 3.9V @ 80µA | 3.9V @ 200µA | 5.5V @ 135µA |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Bulk |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | CoolMOS™ | CoolMOS™ | CoolMOS™ | CoolMOS™ |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V | 3Ohm @ 1.1A, 10V | 950mOhm @ 2.8A, 10V | 1.4Ohm @ 2A, 10V |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.8A (Tc) | 1.8A (Tc) | 4.5A (Tc) | 3.2A (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden SPB02N60S5ATMA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir SPB02N60S5ATMA1 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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