SQSA12CENW-T1_GE3 Tech Spezifikatioune
Vishay Siliconix - SQSA12CENW-T1_GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQSA12CENW-T1_GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® 1212-8W | |
| Serie | Automotive, AEC-Q101, TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7A, 10V | |
| Power Dissipation (Max) | 62.5W (Tc) | |
| Package / Case | PowerPAK® 1212-8W | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQSA12CENW-T1_GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SQSA12CENW-T1_GE3 | SQS462EN-T1_GE3 | SQS484EN-T1_BE3 | SQSA80ENW-T1_GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 8A (Tc) | 16A (Tc) | 18A (Tc) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Supplier Device Package | PowerPAK® 1212-8W | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
| Entworf fir Source Voltage (Vdss) | 100 V | 60 V | 40 V | 80 V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7A, 10V | 63mOhm @ 4.3A, 10V | 9mOhm @ 16.4A, 10V | 21mOhm @ 10A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Power Dissipation (Max) | 62.5W (Tc) | 33W (Tc) | 62W (Tc) | 62.5W (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
| Package / Case | PowerPAK® 1212-8W | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V | 470 pF @ 25 V | 1855 pF @ 25 V | 1358 pF @ 40 V |
| Serie | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | 12 nC @ 10 V | 39 nC @ 10 V | 21 nC @ 10 V |
SQS840EN-T1-GE3Electro-Films (EFI) / VishaySQS850EN-T1-GE3Electro-Films (EFI) / VishaySQS482ENW-T1_GE3VishaySQS484ENW-T1_GE3VishaySQS462EN-T1_GE3Vishay SiliconixMOSFET N-CH 60V 8A PPAK1212-8SQS482EN-T1-BE3Electro-Films (EFI) / VishaySQS484ENElectro-Films (EFI) / VishaySQS484EN-T1_BE3Vishay SiliconixMOSFET N-CH 40V 16A 1212-8SQS460EN-TI-GE3Electro-Films (EFI) / VishaySQS484EN-T1_GE3VishaySQS840CENW-T1_GE3VishaySQS482EN-T1-GE3Electro-Films (EFI) / VishaySQS462EN-T1-GE3Electro-Films (EFI) / VishaySQSA80ENW-T1_GE3Vishay SiliconixMOSFET N-CH 80V 18A PPAK1212-8SQS481ENW-T1_GE3VishaySQS850EN-T1_GE3Vishay SiliconixMOSFET N-CH 60V 12A PPAK1212-8SQS460EN-T1_GE3VishaySQS484EN-T1-GE3Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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