SQS462EN-T1_GE3 Tech Spezifikatioune
Vishay Siliconix - SQS462EN-T1_GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQS462EN-T1_GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® 1212-8 | |
Serie | Automotive, AEC-Q101, TrenchFET® | |
Rds On (Max) @ Id, Vgs | 63mOhm @ 4.3A, 10V | |
Power Dissipation (Max) | 33W (Tc) | |
Package / Case | PowerPAK® 1212-8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | |
Basis Produktnummer | SQS462 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQS462EN-T1_GE3.
Produktiounsattriff | ||||
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Part Number | SQS462EN-T1_GE3 | SQS460EN-T1_BE3 | SQS484EN-T1_BE3 | SQS415ENW-T1_GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Basis Produktnummer | SQS462 | SQS460 | SQS484 | SQS415 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8W |
FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
FET Feature | - | - | - | - |
Supplier Device Package | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8W |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V | 755 pF @ 25 V | 1855 pF @ 25 V | 4825 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 8A (Tc) | 16A (Tc) | 16A (Tc) |
Serie | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 63mOhm @ 4.3A, 10V | 36mOhm @ 5.3A, 10V | 9mOhm @ 16.4A, 10V | 16.1mOhm @ 12A, 10V |
Power Dissipation (Max) | 33W (Tc) | 39W (Tc) | 62W (Tc) | 62.5W (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 20 nC @ 10 V | 39 nC @ 10 V | 82 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 40 V | 40 V |
Eroflueden SQS462EN-T1_GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQS462EN-T1_GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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