SQ2309ES-T1_BE3 Tech Spezifikatioune
Vishay Siliconix - SQ2309ES-T1_BE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQ2309ES-T1_BE3
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Serie | Automotive, AEC-Q101, TrenchFET® | |
Rds On (Max) @ Id, Vgs | 335mOhm @ 1.25A, 10V | |
Power Dissipation (Max) | 2W (Tc) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.7A (Tc) | |
Basis Produktnummer | SQ2309 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQ2309ES-T1_BE3.
Produktiounsattriff | ||||
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Part Number | SQ2309ES-T1_BE3 | SQ2308CES-T1_GE3 | SQ2310ES-T1_GE3 | SQ2315ES-T1_GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V | 5.3 nC @ 10 V | 8.5 nC @ 4.5 V | 13 nC @ 4.5 V |
Vgs (Max) | ±20V | ±20V | ±8V | ±8V |
Rds On (Max) @ Id, Vgs | 335mOhm @ 1.25A, 10V | 150mOhm @ 2.3A, 10V | 30mOhm @ 5A, 4.5V | 50mOhm @ 3.5A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 1.5V, 4.5V | 1.8V, 4.5V |
FET Typ | P-Channel | N-Channel | N-Channel | P-Channel |
Power Dissipation (Max) | 2W (Tc) | 2W (Tc) | 2W (Tc) | 2W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Serie | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 25 V | 205 pF @ 30 V | 485 pF @ 10 V | 870 pF @ 4 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.7A (Tc) | 2.3A (Tc) | 6A (Tc) | 5A (Tc) |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 20 V | 12 V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 1V @ 250µA | 1V @ 250µA |
Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
Basis Produktnummer | SQ2309 | SQ2308 | SQ2310 | SQ2315 |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Eroflueden SQ2309ES-T1_BE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQ2309ES-T1_BE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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