SIHG17N80E-GE3 Tech Spezifikatioune
Vishay Siliconix - SIHG17N80E-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIHG17N80E-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AC | |
Serie | E | |
Rds On (Max) @ Id, Vgs | 290mOhm @ 8.5A, 10V | |
Power Dissipation (Max) | 208W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2408 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Tc) | |
Basis Produktnummer | SIHG17 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIHG17N80E-GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SIHG17N80E-GE3 | SIHG20N50C-E3 | SIHG21N60EF-GE3 | SIHG22N50D-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | E | - | - | - |
Power Dissipation (Max) | 208W (Tc) | 250W (Tc) | 227W (Tc) | 312W (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 2408 pF @ 100 V | 2942 pF @ 25 V | 2030 pF @ 100 V | 1938 pF @ 100 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Rds On (Max) @ Id, Vgs | 290mOhm @ 8.5A, 10V | 270mOhm @ 10A, 10V | 176mOhm @ 11A, 10V | 230mOhm @ 11A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Tc) | 20A (Tc) | 21A (Tc) | 22A (Tc) |
Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V | 76 nC @ 10 V | 84 nC @ 10 V | 98 nC @ 10 V |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Entworf fir Source Voltage (Vdss) | 800 V | 500 V | 600 V | 500 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Basis Produktnummer | SIHG17 | SIHG20 | SIHG21 | SIHG22 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Eroflueden SIHG17N80E-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIHG17N80E-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.