SIHG039N60EF-GE3 Tech Spezifikatioune
Vishay Siliconix - SIHG039N60EF-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIHG039N60EF-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247AC | |
| Serie | EF | |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 32A, 10V | |
| Power Dissipation (Max) | 357W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 4323 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 61A (Tc) | |
| Basis Produktnummer | SIHG039 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIHG039N60EF-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SIHG039N60EF-GE3 | SIHG17N80E-GE3 | SIHG039N60E-GE3 | SIHG16N50C-E3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| FET Feature | - | - | - | - |
| Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Basis Produktnummer | SIHG039 | SIHG17 | SIHG039 | SIHG16 |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 600 V | 800 V | 600 V | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4323 pF @ 100 V | 2408 pF @ 100 V | 4369 pF @ 100 V | 1900 pF @ 25 V |
| Power Dissipation (Max) | 357W (Tc) | 208W (Tc) | 357W (Tc) | 250W (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 61A (Tc) | 15A (Tc) | 63A (Tc) | 16A (Tc) |
| Serie | EF | E | E | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V | 122 nC @ 10 V | 126 nC @ 10 V | 68 nC @ 10 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 32A, 10V | 290mOhm @ 8.5A, 10V | 39mOhm @ 32A, 10V | 380mOhm @ 8A, 10V |
Eroflueden SIHG039N60EF-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIHG039N60EF-GE3 - Vishay Siliconix.
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SIHFZ48RS-GE3Vishay SiliconixMOSFET N-CH 60V 50A D2PAKSiHFZ34LElectro-Films (EFI) / VishaySiHFU9024 MOSElectro-Films (EFI) / VishaySIHG17N60DElectro-Films (EFI) / VishaySiHFZ24SElectro-Films (EFI) / VishaySIHG100N60E-GE3Vishay SiliconixMOSFET N-CH 600V 30A TO247ACSIHG17N80AE-GE3Vishay SiliconixMOSFET N-CH 800V 15A TO247AC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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