SIA477EDJT-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIA477EDJT-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIA477EDJT-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® SC-70-6 Single | |
| Serie | TrenchFET® Gen III | |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 5A, 4.5V | |
| Power Dissipation (Max) | 19W (Tc) | |
| Package / Case | PowerPAK® SC-70-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3050 pF @ 6 V | |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 12 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | |
| Basis Produktnummer | SIA477 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIA477EDJT-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SIA477EDJT-T1-GE3 | SIA483DJ-T1-GE3 | SIA466EDJ-T1-GE3 | SIA477EDJ-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 2.2V @ 250µA | 2.5V @ 250µA | 1V @ 250µA |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
| Basis Produktnummer | SIA477 | SIA483 | SIA466 | SIA477 |
| Input Capacitance (Ciss) (Max) @ Vds | 3050 pF @ 6 V | 1550 pF @ 15 V | 620 pF @ 1 V | 2970 pF @ 6 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 5A, 4.5V | 21mOhm @ 5A, 10V | 9.5mOhm @ 9A, 10V | 14mOhm @ 7A, 4.5V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 12A (Tc) | 25A (Tc) | 12A (Tc) |
| FET Typ | P-Channel | P-Channel | N-Channel | P-Channel |
| Entworf fir Source Voltage (Vdss) | 12 V | 30 V | 20 V | 12 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V | 45 nC @ 10 V | 20 nC @ 10 V | 87 nC @ 8 V |
| Power Dissipation (Max) | 19W (Tc) | 3.5W (Ta), 19W (Tc) | 3.5W (Ta), 19.2W (Tc) | - |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 4.5V, 10V | 4.5V, 10V | - |
| Vgs (Max) | ±8V | ±20V | ±20V | - |
| Serie | TrenchFET® Gen III | TrenchFET® | TrenchFET® | TrenchFET® |
Eroflueden SIA477EDJT-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIA477EDJT-T1-GE3 - Vishay Siliconix.
SIA517DJ-T1-GE3Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6SIA483DJ-T1-GE3Vishay SiliconixMOSFET P-CH 30V 12A PPAK SC70-6SIA466EDJ-T1-GE3Vishay SiliconixMOSFET N-CH 20V 25A PPAK SC70-6SIA477EDJ-T1-GE3Vishay SiliconixMOSFET P-CH 12V 12A PPAK SC70-6SIA461DJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 12A PPAK SC70-6SIA462DJ-T1-GE3Vishay SiliconixMOSFET N-CH 30V 12A PPAK SC70-6SIA469DJ-T1-GE3Vishay SiliconixMOSFET P-CH 30V 12A PPAK SC70-6SIA459EDJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 9A PPAK SC70-6SIA485DJ-T1-GE3Vishay SiliconixMOSFET P-CH 150V 1.6A PPAK SC70
SIA517DJ-T1-GE3 MOSElectro-Films (EFI) / VishaySIA517DJVishaySiA459EDJ-T1-GE3 MOSCCSEMISIA485DJ-T4-GE3Electro-Films (EFI) / VishaySIA456DJ-T3-GE3VishaySIA513DJ-T1-GE3Vishay SiliconixMOSFET N/P-CH 20V 4.5A SC70-6SIA471DJ-T1-GE3Vishay SiliconixMOSFET P-CH 30V 12.9A/30.3A PPAKSiA483DJ-T1-GE3 MOSCCSEMISIA513DJ-T1-E3Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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