SIA466EDJ-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIA466EDJ-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIA466EDJ-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SC-70-6 | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 9A, 10V | |
Power Dissipation (Max) | 3.5W (Ta), 19.2W (Tc) | |
Package / Case | PowerPAK® SC-70-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 1 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Tc) | |
Basis Produktnummer | SIA466 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIA466EDJ-T1-GE3.
Produktiounsattriff | ||||
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Part Number | SIA466EDJ-T1-GE3 | SIA459EDJ-T1-GE3 | SIA456DJ-T1-GE3 | SIA477EDJT-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
FET Typ | N-Channel | P-Channel | N-Channel | P-Channel |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 9A, 10V | 35mOhm @ 5A, 4.5V | 1.38Ohm @ 750mA, 4.5V | 13mOhm @ 5A, 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 1 V | 885 pF @ 10 V | 350 pF @ 100 V | 3050 pF @ 6 V |
Basis Produktnummer | SIA466 | SIA459 | SIA456 | SIA477 |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® Gen III |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 30 nC @ 10 V | 14.5 nC @ 10 V | 50 nC @ 4.5 V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 1.2V @ 250µA | 1.4V @ 250µA | 1V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 200 V | 12 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.5V, 4.5V | 1.8V, 4.5V | 1.8V, 4.5V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Tc) | 9A (Tc) | 2.6A (Tc) | 12A (Tc) |
Vgs (Max) | ±20V | ±12V | ±16V | ±8V |
Power Dissipation (Max) | 3.5W (Ta), 19.2W (Tc) | 2.9W (Ta), 15.6W (Tc) | 3.5W (Ta), 19W (Tc) | 19W (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 Single |
Package / Case | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
Eroflueden SIA466EDJ-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIA466EDJ-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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