SI7110DN-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI7110DN-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI7110DN-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® 1212-8 | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 5.3mOhm @ 21.1A, 10V | |
Power Dissipation (Max) | 1.5W (Ta) | |
Package / Case | PowerPAK® 1212-8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13.5A (Ta) | |
Basis Produktnummer | SI7110 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI7110DN-T1-GE3.
Produktiounsattriff | ||||
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Part Number | SI7110DN-T1-GE3 | SI7111EDN-T1-GE3 | SI7108DN-T1-GE3 | SI7112DN-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 20 V | 30 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.5V, 4.5V | 4.5V, 10V | 4.5V, 10V |
Package / Case | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
Rds On (Max) @ Id, Vgs | 5.3mOhm @ 21.1A, 10V | 8.55mOhm @ 15A, 4.5V | 4.9mOhm @ 22A, 10V | 7.5mOhm @ 17.8A, 10V |
Power Dissipation (Max) | 1.5W (Ta) | 52W (Tc) | 1.5W (Ta) | 1.5W (Ta) |
Supplier Device Package | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V | 46 nC @ 2.5 V | 30 nC @ 4.5 V | 27 nC @ 4.5 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13.5A (Ta) | 60A (Tc) | 14A (Ta) | 11.3A (Tc) |
Serie | TrenchFET® | TrenchFET® Gen III | TrenchFET® | TrenchFET® |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 1.6V @ 250µA | 2V @ 250µA | 1.5V @ 250µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) |
Vgs (Max) | ±20V | ±12V | ±16V | ±12V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Basis Produktnummer | SI7110 | SI7111 | SI7108 | SI7112 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Eroflueden SI7110DN-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI7110DN-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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