SI7110DN-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI7110DN-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI7110DN-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® 1212-8 | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 21.1A, 10V | |
| Power Dissipation (Max) | 1.5W (Ta) | |
| Package / Case | PowerPAK® 1212-8 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13.5A (Ta) | |
| Basis Produktnummer | SI7110 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS |
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|---|---|---|---|---|
| Part Number | SI7110DN-T1-E3 | SI7108DN-T1-GE3 | SI7112DN-T1-E3 | SI7107DN-T1-E3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V | 30 nC @ 4.5 V | 27 nC @ 4.5 V | 44 nC @ 4.5 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13.5A (Ta) | 14A (Ta) | 11.3A (Tc) | 9.8A (Ta) |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 30 V | 20 V |
| Package / Case | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Supplier Device Package | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 21.1A, 10V | 4.9mOhm @ 22A, 10V | 7.5mOhm @ 17.8A, 10V | 10.8mOhm @ 15.3A, 4.5V |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2V @ 250µA | 1.5V @ 250µA | 1V @ 450µA |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±20V | ±16V | ±12V | ±8V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Basis Produktnummer | SI7110 | SI7108 | SI7112 | SI7107 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 1.8V, 4.5V |
| Power Dissipation (Max) | 1.5W (Ta) | 1.5W (Ta) | 1.5W (Ta) | 1.5W (Ta) |
Eroflueden SI7110DN-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI7110DN-T1-E3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
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| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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