SI5509DC-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI5509DC-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI5509DC-T1-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 1206-8 ChipFET™ | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 52mOhm @ 5A, 4.5V | |
Power - Max | 4.5W | |
Package / Case | 8-SMD, Flat Lead | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 5V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 20V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.1A, 4.8A | |
Konfiguratioun | N and P-Channel | |
Basis Produktnummer | SI5509 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI5509DC-T1-E3.
Produktiounsattriff | ||||
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Part Number | SI5509DC-T1-E3 | SI5515CDC-T1-E3 | SI5513CDC-T1-GE3 | SI5504BDC-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Package / Case | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead |
Entworf fir Source Voltage (Vdss) | 20V | 20V | 20V | 30V |
Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.1A, 4.8A | 4A (Tc) | 4A, 3.7A | 4A, 3.7A |
Basis Produktnummer | SI5509 | SI5515 | SI5513 | SI5504 |
Power - Max | 4.5W | 3.1W | 3.1W | 3.12W, 3.1W |
Supplier Device Package | 1206-8 ChipFET™ | 1206-8 ChipFET™ | 1206-8 ChipFET™ | 1206-8 ChipFET™ |
Vgs (th) (Max) @ Id | 2V @ 250µA | 800mV @ 250µA | 1.5V @ 250µA | 3V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 10V | 632pF @ 10V | 285pF @ 10V | 220pF @ 15V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 5V | 11.3nC @ 5V | 4.2nC @ 5V | 7nC @ 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 52mOhm @ 5A, 4.5V | 36mOhm @ 6A, 4.5V | 55mOhm @ 4.4A, 4.5V | 65mOhm @ 3.1A, 10V |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden SI5509DC-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI5509DC-T1-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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