SI5484DU-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI5484DU-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI5484DU-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® ChipFET™ Single | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 7.6A, 4.5V | |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) | |
| Package / Case | PowerPAK® ChipFET™ Single | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | |
| Basis Produktnummer | SI5484 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI5484DU-T1-GE3.
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|---|---|---|---|---|
| Part Number | SI5484DU-T1-GE3 | SI5475DC-T1-E3 | SI5480DU-T1-GE3 | SI5486DU-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 5.5A (Ta) | 12A (Tc) | 12A (Tc) |
| Supplier Device Package | PowerPAK® ChipFET™ Single | 1206-8 ChipFET™ | PowerPAK® ChipFET™ Single | PowerPAK® ChipFET™ Single |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | 29 nC @ 4.5 V | 34 nC @ 10 V | 54 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 10 V | - | 1230 pF @ 15 V | 2100 pF @ 10 V |
| Power Dissipation (Max) | 3.1W (Ta), 31W (Tc) | 1.3W (Ta) | 3.1W (Ta), 31W (Tc) | 3.1W (Ta), 31W (Tc) |
| FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 1.8V, 4.5V | 4.5V, 10V | 1.8V, 4.5V |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 450mV @ 1mA (Min) | 3V @ 250µA | 1V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | PowerPAK® ChipFET™ Single | 8-SMD, Flat Lead | PowerPAK® ChipFET™ Single | PowerPAK® ChipFET™ Single |
| Basis Produktnummer | SI5484 | SI5475 | SI5480 | SI5486 |
| Entworf fir Source Voltage (Vdss) | 20 V | 12 V | 30 V | 20 V |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 7.6A, 4.5V | 31mOhm @ 5.5A, 4.5V | 16mOhm @ 7.2A, 10V | 15mOhm @ 7.7A, 4.5V |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Vgs (Max) | ±12V | ±8V | ±20V | ±8V |
Eroflueden SI5484DU-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI5484DU-T1-GE3 - Vishay Siliconix.
SI5475DC-T1-E3Vishay SiliconixMOSFET P-CH 12V 5.5A 1206-8SI5480DU-T1-GE3Vishay SiliconixMOSFET N-CH 30V 12A PPAKSI5486DU-T1-GE3Vishay SiliconixMOSFET N-CH 20V 12A CHIPFETSI5504DC-T1-E3Vishay SiliconixMOSFET N/P-CH 30V 2.9A 1206-8
SI5480DUElectro-Films (EFI) / VishaySI5504DC-E3Electro-Films (EFI) / VishaySI5480DU-TI-GE3Electro-Films (EFI) / VishaySI5480DU-T1-E3Vishay SiliconixMOSFET N-CH 30V 12A PPAKSI5504BDC-T1-E3Vishay SiliconixMOSFET N/P-CH 30V 4A 1206-8SI5475DDC-T1-GE3Vishay SiliconixMOSFET P-CH 12V 6A 1206-8SI5475DDC-T1-GE3 MOSElectro-Films (EFI) / VishaySI5486DU-T1-E3Vishay SiliconixMOSFET N-CH 20V 12A CHIPFETSI5476DU-T1-GE3Vishay SiliconixMOSFET N-CH 60V 12A CHIPFETSI5504DC-T1Electro-Films (EFI) / VishaySI5480DU-T1Electro-Films (EFI) / VishaySI5504BDC-T1-GE3Vishay SiliconixMOSFET N/P-CH 30V 4A 1206-8SI5509DC-T1-E3Vishay SiliconixMOSFET N/P-CH 20V 6.1A 1206-8SI5511DC-T1-E3Vishay SiliconixMOSFET N/P-CH 30V 4A 1206-8| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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