SI2393DS-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI2393DS-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI2393DS-T1-GE3
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
Vgs (Max) | +16V, -20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Serie | TrenchFET® Gen IV | |
Rds On (Max) @ Id, Vgs | 22.7mOhm @ 5A, 10V | |
Power Dissipation (Max) | 1.3W (Ta), 2.5W (Tc) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 25.2 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.1A (Ta), 7.5A (Tc) | |
Basis Produktnummer | SI2393 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI2393DS-T1-GE3.
Produktiounsattriff | ||||
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Part Number | SI2393DS-T1-GE3 | SI2399DS-T1-GE3 | SI2392ADS-T1-GE3 | SI2387DS-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 15 V | 835 pF @ 10 V | 196 pF @ 50 V | 395 pF @ 40 V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | 1.5V @ 250µA | 3V @ 250µA | 2.5V @ 250µA |
Rds On (Max) @ Id, Vgs | 22.7mOhm @ 5A, 10V | 34mOhm @ 5.1A, 10V | 126mOhm @ 2A, 10V | 164mOhm @ 2.1A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 1.3W (Ta), 2.5W (Tc) | 2.5W (Tc) | 1.25W (Ta), 2.5W (Tc) | 1.3W (Ta), 2.5W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.1A (Ta), 7.5A (Tc) | 6A (Tc) | 3.1A (Tc) | 2.1A (Ta), 3A (Tc) |
Serie | TrenchFET® Gen IV | TrenchFET® | TrenchFET® | TrenchFET® Gen IV |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
FET Typ | P-Channel | P-Channel | N-Channel | P-Channel |
Vgs (Max) | +16V, -20V | ±12V | ±20V | ±20V |
Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Basis Produktnummer | SI2393 | SI2399 | SI2392 | - |
Gate Charge (Qg) (Max) @ Vgs | 25.2 nC @ 10 V | 20 nC @ 4.5 V | 10.4 nC @ 10 V | 10.2 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 100 V | 80 V |
Eroflueden SI2393DS-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI2393DS-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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