SI2377EDS-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI2377EDS-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI2377EDS-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 61mOhm @ 3.2A, 4.5V | |
| Power Dissipation (Max) | 1.25W (Ta), 1.8W (Tc) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 8 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.4A (Tc) | |
| Basis Produktnummer | SI2377 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI2377EDS-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI2377EDS-T1-GE3 | SI2392DS-T1-GE3 | SI2372DS-T1-GE3 | SI2387DS-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® Gen IV |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Power Dissipation (Max) | 1.25W (Ta), 1.8W (Tc) | 1.25W (Ta), 2.5W (Tc) | 960mW (Ta), 1.7W (Tc) | 1.3W (Ta), 2.5W (Tc) |
| Basis Produktnummer | SI2377 | SI2392 | SI2372 | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 3V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) | SOT-23 | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
| Entworf fir Source Voltage (Vdss) | 20 V | 100 V | 30 V | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 8 V | 10.4 nC @ 10 V | 8.9 nC @ 10 V | 10.2 nC @ 10 V |
| FET Typ | P-Channel | N-Channel | N-Channel | P-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.4A (Tc) | 3.1A (Tc) | 4A (Ta), 5.3A (Tc) | 2.1A (Ta), 3A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 61mOhm @ 3.2A, 4.5V | 126mOhm @ 2A, 10V | 33mOhm @ 3A, 10V | 164mOhm @ 2.1A, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Vgs (Max) | ±8V | ±20V | ±20V | ±20V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden SI2377EDS-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI2377EDS-T1-GE3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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