SI1308EDL-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI1308EDL-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI1308EDL-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SC-70-3 | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 132mOhm @ 1.4A, 10V | |
Power Dissipation (Max) | 400mW (Ta), 500mW (Tc) | |
Package / Case | SC-70, SOT-323 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 105 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.4A (Tc) | |
Basis Produktnummer | SI1308 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI1308EDL-T1-GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SI1308EDL-T1-GE3 | SI1305EDL-T1-GE3 | SI1305EDL-T1-E3 | SI1400DL-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Entworf fir Source Voltage (Vdss) | 30 V | 8 V | 8 V | 20 V |
Power Dissipation (Max) | 400mW (Ta), 500mW (Tc) | 290mW (Ta) | 290mW (Ta) | 568mW (Ta) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | SI1308 | SI1305 | SI1305 | SI1400 |
FET Feature | - | - | - | - |
Serie | TrenchFET® | - | - | TrenchFET® |
Supplier Device Package | SC-70-3 | SC-70-3 | SC-70-3 | SC-70-6 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.4A (Tc) | 860mA (Ta) | 860mA (Ta) | 1.6A (Ta) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±12V | ±8V | ±8V | ±12V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 450mV @ 250µA (Min) | 450mV @ 250µA (Min) | 600mV @ 250µA (Min) |
Package / Case | SC-70, SOT-323 | SC-70, SOT-323 | SC-70, SOT-323 | 6-TSSOP, SC-88, SOT-363 |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | 1.8V, 4.5V | 1.8V, 4.5V | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 132mOhm @ 1.4A, 10V | 280mOhm @ 1A, 4.5V | 280mOhm @ 1A, 4.5V | 150mOhm @ 1.7A, 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 105 pF @ 15 V | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 10 V | 4 nC @ 4.5 V | 4 nC @ 4.5 V | 4 nC @ 4.5 V |
Eroflueden SI1308EDL-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI1308EDL-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.