SI1317DL-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI1317DL-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI1317DL-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 800mV @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SC-70-3 | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 150mOhm @ 1.4A, 4.5V | |
Power Dissipation (Max) | 500mW (Tc) | |
Package / Case | SC-70, SOT-323 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -50°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 272 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.4A (Tc) | |
Basis Produktnummer | SI1317 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI1317DL-T1-GE3.
Produktiounsattriff | ||||
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Part Number | SI1317DL-T1-GE3 | SI1305EDL-T1-GE3 | SI1307DL-T1-E3 | SI1400DL-T1-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Basis Produktnummer | SI1317 | SI1305 | SI1307 | SI1400 |
Supplier Device Package | SC-70-3 | SC-70-3 | SC-70-3 | SC-70-6 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.4A (Tc) | 860mA (Ta) | 850mA (Ta) | 1.6A (Ta) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Operatioun Temperatur | -50°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 4.5V | 1.8V, 4.5V | 2.5V, 4.5V |
Package / Case | SC-70, SOT-323 | SC-70, SOT-323 | SC-70, SOT-323 | 6-TSSOP, SC-88, SOT-363 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | TrenchFET® | - | TrenchFET® | TrenchFET® |
FET Typ | P-Channel | P-Channel | P-Channel | N-Channel |
Vgs (Max) | ±8V | ±8V | ±8V | ±12V |
Entworf fir Source Voltage (Vdss) | 20 V | 8 V | 12 V | 20 V |
Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V | 4 nC @ 4.5 V | 5 nC @ 4.5 V | 4 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 272 pF @ 10 V | - | - | - |
Power Dissipation (Max) | 500mW (Tc) | 290mW (Ta) | 290mW (Ta) | 568mW (Ta) |
Rds On (Max) @ Id, Vgs | 150mOhm @ 1.4A, 4.5V | 280mOhm @ 1A, 4.5V | 290mOhm @ 1A, 4.5V | 150mOhm @ 1.7A, 4.5V |
Vgs (th) (Max) @ Id | 800mV @ 250µA | 450mV @ 250µA (Min) | 450mV @ 250µA (Min) | 600mV @ 250µA (Min) |
Eroflueden SI1317DL-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI1317DL-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
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Oceania | Australien | 6 |
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Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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