IRLU014 Tech Spezifikatioune
Vishay Siliconix - IRLU014 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRLU014
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-251AA | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 200mOhm @ 4.6A, 5V | |
Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 5V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.7A (Tc) | |
Basis Produktnummer | IRLU014 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRLU014.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRLU014 | IRLSL3034PBF | IRLTS6342TRPBF | IRLSL3036PBF |
Hiersteller | Vishay Siliconix | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 5 V | 162 nC @ 4.5 V | 11 nC @ 4.5 V | 140 nC @ 4.5 V |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 5V | 4.5V, 10V | 2.5V, 4.5V | 4.5V, 10V |
Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) | 375W (Tc) | 2W (Ta) | 380W (Tc) |
Basis Produktnummer | IRLU014 | - | IRLTS6342 | - |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V | 10315 pF @ 25 V | 1010 pF @ 25 V | 11210 pF @ 50 V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-262-3 Long Leads, I²Pak, TO-262AA | SOT-23-6 | TO-262-3 Long Leads, I²Pak, TO-262AA |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tube |
Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.7A (Tc) | 195A (Tc) | 8.3A (Ta) | 195A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 60 V | 40 V | 30 V | 60 V |
Rds On (Max) @ Id, Vgs | 200mOhm @ 4.6A, 5V | 1.7mOhm @ 195A, 10V | 17.5mOhm @ 8.3A, 4.5V | 2.4mOhm @ 165A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 2V @ 250µA | 2.5V @ 250µA | 1.1V @ 10µA | 2.5V @ 250µA |
Supplier Device Package | TO-251AA | TO-262 | 6-TSOP | TO-262 |
Vgs (Max) | ±10V | ±20V | ±12V | ±16V |
Serie | - | HEXFET® | HEXFET® | HEXFET® |
Eroflueden IRLU014 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRLU014 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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