IRLSL3034PBF Tech Spezifikatioune
Infineon Technologies - IRLSL3034PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLSL3034PBF
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-262 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 1.7mOhm @ 195A, 10V | |
Power Dissipation (Max) | 375W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 10315 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 195A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLSL3034PBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRLSL3034PBF | IRLTS6342TRPBF | IRLS4030TRLPBF | IRLS510A |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Rds On (Max) @ Id, Vgs | 1.7mOhm @ 195A, 10V | 17.5mOhm @ 8.3A, 4.5V | 4.3mOhm @ 110A, 10V | 440mOhm @ 2.25A, 5V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.5V, 4.5V | 4.5V, 10V | 5V |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | SOT-23-6 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 Full Pack |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 1.1V @ 10µA | 2.5V @ 250µA | 2V @ 250µA |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 10315 pF @ 25 V | 1010 pF @ 25 V | 11360 pF @ 50 V | 235 pF @ 25 V |
Power Dissipation (Max) | 375W (Tc) | 2W (Ta) | 370W (Tc) | 23W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 195A (Tc) | 8.3A (Ta) | 180A (Tc) | 4.5A (Tc) |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 4.5 V | 11 nC @ 4.5 V | 130 nC @ 4.5 V | 8 nC @ 5 V |
Supplier Device Package | TO-262 | 6-TSOP | D2PAK | TO-220F-3 |
Entworf fir Source Voltage (Vdss) | 40 V | 30 V | 100 V | 100 V |
Vgs (Max) | ±20V | ±12V | ±16V | ±20V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Serie | HEXFET® | HEXFET® | HEXFET® | - |
Eroflueden IRLSL3034PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLSL3034PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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