IRFP264 Tech Spezifikatioune
Vishay Siliconix - IRFP264 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFP264
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AC | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 75mOhm @ 23A, 10V | |
Power Dissipation (Max) | 280W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 38A (Tc) | |
Basis Produktnummer | IRFP264 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | RoHS net konform |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFP264.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFP264 | IRFP264NPBF | IRFP260PBF | IRFP264 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | IXYS |
Rds On (Max) @ Id, Vgs | 75mOhm @ 23A, 10V | 60mOhm @ 25A, 10V | 55mOhm @ 28A, 10V | 75mOhm @ 23A, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 280W (Tc) | 380W (Tc) | 280W (Tc) | 280W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V | 210 nC @ 10 V | 230 nC @ 10 V | 210 nC @ 10 V |
FET Feature | - | - | - | - |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 38A (Tc) | 44A (Tc) | 46A (Tc) | 38A (Tc) |
Basis Produktnummer | IRFP264 | IRFP264 | IRFP260 | IRFP26 |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Package protegéieren | Tube | Tube | Tube | Tube |
Entworf fir Source Voltage (Vdss) | 250 V | 250 V | 200 V | 250 V |
Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247 (IXTH) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V | 3860 pF @ 25 V | 5200 pF @ 25 V | 4800 pF @ 25 V |
Serie | - | - | - | - |
Eroflueden IRFP264 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFP264 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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