IRFP260NPBF Tech Spezifikatioune
Infineon Technologies - IRFP260NPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFP260NPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AC | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 40mOhm @ 28A, 10V | |
Power Dissipation (Max) | 300W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4057 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
Basis Produktnummer | IRFP260 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFP260NPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFP260NPBF | IRFP260 | IRFP260MPBF | IRFP26N60L |
Hiersteller | Infineon Technologies | IXYS | Infineon Technologies | Vishay Siliconix |
Supplier Device Package | TO-247AC | TO-247 (IXTH) | TO-247AC | TO-247AC |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 40mOhm @ 28A, 10V | 55mOhm @ 28A, 10V | 40mOhm @ 28A, 10V | 250mOhm @ 16A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 10 V | 230 nC @ 10 V | 234 nC @ 10 V | 180 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 46A (Tc) | 50A (Tc) | 26A (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 4057 pF @ 25 V | 3900 pF @ 25 V | 4057 pF @ 25 V | 5020 pF @ 25 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tube | Tube | Tube | Tube |
Power Dissipation (Max) | 300W (Tc) | 280W (Tc) | 300W (Tc) | 470W (Tc) |
Basis Produktnummer | IRFP260 | IRFP26 | IRFP260 | IRFP26 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 200 V | 600 V |
Serie | HEXFET® | - | HEXFET® | - |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden IRFP260NPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFP260NPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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