IRFIZ14G Tech Spezifikatioune
Vishay Siliconix - IRFIZ14G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFIZ14G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 200mOhm @ 4.8A, 10V | |
Power Dissipation (Max) | 27W (Tc) | |
Package / Case | TO-220-3 Full Pack, Isolated Tab | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | |
Basis Produktnummer | IRFIZ14 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFIZ14G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFIZ14G | IRFIBF30GPBF | IRFIZ34E | IRFIZ24NPBF |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Infineon Technologies | Infineon Technologies |
Power Dissipation (Max) | 27W (Tc) | 35W (Tc) | 37W (Tc) | 29W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 1.9A (Tc) | 21A (Tc) | 14A (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Basis Produktnummer | IRFIZ14 | IRFIBF30 | - | IRFIZ24 |
Supplier Device Package | TO-220-3 | TO-220-3 | PG-TO220-FP | TO-220AB Full-Pak |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | 78 nC @ 10 V | 34 nC @ 10 V | 20 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 200mOhm @ 4.8A, 10V | 3.7Ohm @ 1.1A, 10V | 42mOhm @ 11A, 10V | 70mOhm @ 7.8A, 10V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Package protegéieren | Tube | Tube | Tube | Tube |
FET Feature | - | - | - | - |
Serie | - | - | HEXFET® | HEXFET® |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V | 1200 pF @ 25 V | 700 pF @ 25 V | 370 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 60 V | 900 V | 60 V | 55 V |
Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack | TO-220-3 Full Pack |
Eroflueden IRFIZ14G PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFIZ14G - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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