IRFIBF30GPBF Tech Spezifikatioune
Vishay Siliconix - IRFIBF30GPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFIBF30GPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 1.1A, 10V | |
| Power Dissipation (Max) | 35W (Tc) | |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 900 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.9A (Tc) | |
| Basis Produktnummer | IRFIBF30 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFIBF30GPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFIBF30GPBF | IRFIZ24EPBF | IRFIBE30G | IRFIBE30GPBF |
| Hiersteller | Vishay Siliconix | Infineon Technologies | Vishay Siliconix | Vishay Siliconix |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | 370 pF @ 25 V | 1300 pF @ 25 V | 1300 pF @ 25 V |
| Supplier Device Package | TO-220-3 | TO-220AB Full-Pak | TO-220-3 | TO-220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V | 20 nC @ 10 V | 78 nC @ 10 V | 78 nC @ 10 V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Serie | - | HEXFET® | - | - |
| Entworf fir Source Voltage (Vdss) | 900 V | 60 V | 800 V | 800 V |
| Package / Case | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.9A (Tc) | 14A (Tc) | 2.1A (Tc) | 2.1A (Tc) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Power Dissipation (Max) | 35W (Tc) | 29W (Tc) | 35W (Tc) | 35W (Tc) |
| Basis Produktnummer | IRFIBF30 | - | IRFIBE30 | IRFIBE30 |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 1.1A, 10V | 71mOhm @ 7.8A, 10V | 3Ohm @ 1.3A, 10V | 3Ohm @ 1.3A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden IRFIBF30GPBF PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFIBF30GPBF - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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