IRFD9123 Tech Spezifikatioune
Vishay Siliconix - IRFD9123 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRFD9123
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 4-HVMDIP | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V | |
Power Dissipation (Max) | - | |
Package / Case | 4-DIP (0.300", 7.62mm) | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | - | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1A (Ta) | |
Basis Produktnummer | IRFD9123 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRFD9123.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFD9123 | IRFD9210 | IRFD9210PBF | IRFD9120 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Harris Corporation |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | 8.9 nC @ 10 V | 8.9 nC @ 10 V | 18 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Power Dissipation (Max) | - | 1W (Ta) | 1W (Ta) | 1.3W (Ta) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package protegéieren | Tube | Tube | Bulk | Bulk |
FET Feature | - | - | - | - |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V | 170 pF @ 25 V | 170 pF @ 25 V | 390 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V | 3Ohm @ 240mA, 10V | 3Ohm @ 240mA, 10V | 600mOhm @ 600mA, 10V |
Basis Produktnummer | IRFD9123 | IRFD9210 | IRFD9210 | - |
Package / Case | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300", 7.62mm) |
Entworf fir Source Voltage (Vdss) | 100 V | 200 V | 200 V | 100 V |
Serie | - | - | - | - |
Supplier Device Package | 4-HVMDIP | 4-HVMDIP | 4-HVMDIP | 4-HVMDIP |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1A (Ta) | 400mA (Ta) | 400mA (Ta) | 1A (Ta) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Eroflueden IRFD9123 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRFD9123 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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