IRFD9123 Tech Spezifikatioune
Harris Corporation - IRFD9123 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Harris Corporation - IRFD9123
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Harris Corporation | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 4-HVMDIP | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V | |
| Power Dissipation (Max) | - | |
| Package / Case | 4-DIP (0.300", 7.62mm) | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | - | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Harris Corporation IRFD9123.
| Produktiounsattriff | |
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|
|
|---|---|---|---|---|
| Part Number | IRFD9123 | IRFD9120 | IRFD9113 | IRFD9123 |
| Hiersteller | Harris Corporation | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V | 390 pF @ 25 V | 250 pF @ 25 V | 390 pF @ 25 V |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Serie | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300", 7.62mm) | 4-DIP (0.300", 7.62mm) |
| Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 60 V | 100 V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | - | 4V @ 250µA |
| Power Dissipation (Max) | - | 1.3W (Ta) | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1A (Ta) | 1A (Ta) | 600mA (Ta) | 1A (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V | 18 nC @ 10 V | 15 nC @ 15 V | 18 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 600mA, 10V | 600mOhm @ 600mA, 10V | 1.6Ohm @ 300mA, 10V | 600mOhm @ 600mA, 10V |
| Operatioun Temperatur | - | -55°C ~ 175°C (TJ) | - | - |
| Supplier Device Package | 4-HVMDIP | 4-HVMDIP | 4-HVMDIP | 4-HVMDIP |
| Package protegéieren | Tube | Bulk | Tube | Tube |
| FET Feature | - | - | - | - |
IRFF110IRIRFD9120Vishay SiliconixMOSFET P-CH 100V 1A 4DIPIRFD9113Vishay SiliconixMOSFET P-CH 60V 600MA 4DIPIRFD9120 MOSHARRIS/MOTIRFD9123Vishay SiliconixMOSFET P-CH 100V 1A 4DIPIRFD9120Harris CorporationMOSFET P-CH 100V 1A 4DIPIRFD9210PBF MOSIRIRFD9110PBFVishay SiliconixMOSFET P-CH 100V 700MA 4DIPIRFF120RHIRFF120IRIRFD9120PBFVishay SiliconixMOSFET P-CH 100V 1A 4DIPIRFD9120PBF-NDIRPB-FREEIRFD9210PBFVishay SiliconixMOSFET P-CH 200V 400MA 4DIPIRFD9210Vishay SiliconixMOSFET P-CH 200V 400MA 4DIPIRFD9220PBFVishay SiliconixMOSFET P-CH 200V 560MA 4DIPIRFD9123 MOSMOTOROLA
IRFD9120PBF MOSElectro-Films (EFI) / VishayIRFD9113Harris Corporation-0.6A, -80V, 1.6 OHM, P-CHANNEL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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