IRF740 Tech Spezifikatioune
Vishay Siliconix - IRF740 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - IRF740
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220AB | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V | |
Power Dissipation (Max) | 125W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 400 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | |
Basis Produktnummer | IRF740 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix IRF740.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF740 | IRF7401PBF | IRF7401TRPBF | IRF740 |
Hiersteller | Vishay Siliconix | International Rectifier | Infineon Technologies | STMicroelectronics |
Basis Produktnummer | IRF740 | - | IRF7401 | IRF7 |
Package / Case | TO-220-3 | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | TO-220-3 |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
Serie | - | HEXFET® | HEXFET® | PowerMESH™ II |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 700mV @ 250µA (Min) | 700mV @ 250µA (Min) | 4V @ 250µA |
Supplier Device Package | TO-220AB | 8-SO | 8-SO | TO-220 |
Vgs (Max) | ±20V | ±12V | ±12V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | 1600 pF @ 15 V | 1600 pF @ 15 V | 1400 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 400 V | 20 V | 20 V | 400 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 2.7V, 4.5V | 2.7V, 4.5V | 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | 8.7A (Ta) | 8.7A (Ta) | 10A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | 48 nC @ 4.5 V | 48 nC @ 4.5 V | 43 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 125W (Tc) | 2.5W (Ta) | 2.5W (Ta) | 125W (Tc) |
Package protegéieren | Tube | Bulk | Tape & Reel (TR) | Tube |
Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V | 22mOhm @ 4.1A, 4.5V | 22mOhm @ 4.1A, 4.5V | 550mOhm @ 5.3A, 10V |
Eroflueden IRF740 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir IRF740 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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