IRF7389TRPBF Tech Spezifikatioune
Infineon Technologies - IRF7389TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7389TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V | |
Power - Max | 2.5W | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | |
Konfiguratioun | N and P-Channel | |
Basis Produktnummer | IRF738 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7389TRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF7389TRPBF | IRF7389 | IRF7380TRPBF | IRF7389PBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | International Rectifier |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Konfiguratioun | N and P-Channel | N and P-Channel | 2 N-Channel (Dual) | N and P-Channel |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 4V @ 250µA | 1V @ 250µA |
Entworf fir Source Voltage (Vdss) | 30V | 30V | 80V | 30V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power - Max | 2.5W | 2.5W | 2W | 2.5W |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | IRF738 | IRF738 | IRF7380 | IRF738 |
Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V | 29mOhm @ 5.8A, 10V | 73mOhm @ 2.2A, 10V | 29mOhm @ 5.8A, 10V |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V | 33nC @ 10V | 23nC @ 10V | 33nC @ 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Bulk |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | - | 3.6A | - |
Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V | 650pF @ 25V | 660pF @ 25V | 650pF @ 25V |
Supplier Device Package | 8-SO | 8-SO | 8-SO | 8-SO |
Eroflueden IRF7389TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7389TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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