UF5402-E3/73 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - UF5402-E3/73 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - UF5402-E3/73
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 3 A | |
Voltage - DC Reverse (Vr) (Max) | 200 V | |
Technologie | Standard | |
Supplier Device Package | DO-201AD | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 50 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | DO-201AD, Axial | |
Package protegéieren | Cut Tape (CT) | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Through Hole | |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
Capacitance @ Vr, F. | 45pF @ 4V, 1MHz | |
Basis Produktnummer | UF5402 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | UF5402-E3/73 | UF5404-AP | UF5407 | UF5406-E3/54 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Micro Commercial Co | NTE Electronics, Inc | Vishay General Semiconductor - Diodes Division |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Basis Produktnummer | UF5402 | UF5404 | - | UF5406 |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
Technologie | Standard | Standard | Standard | Standard |
Capacitance @ Vr, F. | 45pF @ 4V, 1MHz | 75pF @ 4V, 1MHz | 36pF @ 4V, 1MHz | 36pF @ 4V, 1MHz |
Package protegéieren | Cut Tape (CT) | Tape & Box (TB) | Bag | Tape & Reel (TR) |
Package / Case | DO-201AD, Axial | DO-201AD, Axial | DO-201AD, Axial | DO-201AD, Axial |
Voltage - DC Reverse (Vr) (Max) | 200 V | 400 V | 800 V | 600 V |
Reverse Recovery Time (trr) | 50 ns | 50 ns | 75 ns | 75 ns |
Serie | - | - | - | - |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 200 V | 10 µA @ 400 V | 10 µA @ 800 V | 10 µA @ 600 V |
Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 3 A | 1.3 V @ 3 A | 1.7 V @ 3 A | 1.7 V @ 3 A |
Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | - | -55°C ~ 150°C |
Supplier Device Package | DO-201AD | DO-201AD | DO-201AD | DO-201AD |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden UF5402-E3/73 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir UF5402-E3/73 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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