UF5406-E3/54 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - UF5406-E3/54 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - UF5406-E3/54
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 3 A | |
Voltage - DC Reverse (Vr) (Max) | 600 V | |
Technologie | Standard | |
Supplier Device Package | DO-201AD | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 75 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | DO-201AD, Axial | |
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Through Hole | |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
Capacitance @ Vr, F. | 36pF @ 4V, 1MHz | |
Basis Produktnummer | UF5406 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | UF5406-E3/54 | UF5406 | UF5403 | UF5408-E3/73 |
Hiersteller | Vishay General Semiconductor - Diodes Division | NTE Electronics, Inc | Diotec Semiconductor | Vishay General Semiconductor - Diodes Division |
Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 3 A | 1.7 V @ 3 A | 1 V @ 3 A | 1.7 V @ 3 A |
Package / Case | DO-201AD, Axial | DO-201AD, Axial | DO-201AA, DO-27, Axial | DO-201AD, Axial |
Technologie | Standard | Standard | Standard | Standard |
Reverse Recovery Time (trr) | 75 ns | 75 ns | 50 ns | 75 ns |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
Serie | - | - | - | - |
Basis Produktnummer | UF5406 | - | - | UF5408 |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Supplier Device Package | DO-201AD | DO-201AD | DO-201 | DO-201AD |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Operatiounstemperatur - Junction | -55°C ~ 150°C | - | -50°C ~ 175°C | -55°C ~ 150°C |
Capacitance @ Vr, F. | 36pF @ 4V, 1MHz | 36pF @ 4V, 1MHz | - | 36pF @ 4V, 1MHz |
Package protegéieren | Tape & Reel (TR) | Bag | Tape & Reel (TR) | Cut Tape (CT) |
Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V | 300 V | 1000 V |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | 10 µA @ 600 V | 5 µA @ 300 V | 10 µA @ 1000 V |
Eroflueden UF5406-E3/54 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir UF5406-E3/54 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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