SS12P2LHM3/86A Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - SS12P2LHM3/86A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - SS12P2LHM3/86A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 560 mV @ 12 A | |
Voltage - DC Reverse (Vr) (Max) | 20 V | |
Technologie | Schottky | |
Supplier Device Package | TO-277A (SMPC) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | eSMP® | |
Package / Case | TO-277, 3-PowerDFN |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 1 mA @ 30 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | |
Capacitance @ Vr, F. | 930pF @ 4V, 1MHz | |
Basis Produktnummer | SS12P2 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division SS12P2LHM3/86A.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SS12P2LHM3/86A | SS12HE3/61T | SS12L R3G | SS12P4S-M3/86A |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | TSC (Taiwan Semiconductor) | Vishay General Semiconductor - Diodes Division |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 12A | 1A | 1A | 12A |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | eSMP® | - | - | eSMP® |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | Tape & Reel (TR) |
Voltage - Viru (Vf) (Max) @ Wann | 560 mV @ 12 A | 500 mV @ 1 A | 450mV @ 1A | 600 mV @ 12 A |
Operatiounstemperatur - Junction | -55°C ~ 150°C | -65°C ~ 125°C | -55°C ~ 125°C | -55°C ~ 150°C |
Supplier Device Package | TO-277A (SMPC) | DO-214AC (SMA) | Sub SMA | TO-277A (SMPC) |
Voltage - DC Reverse (Vr) (Max) | 20 V | 20 V | 20V | 30 V |
Capacitance @ Vr, F. | 930pF @ 4V, 1MHz | - | - | 750pF @ 4V, 1MHz |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery = 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Technologie | Schottky | Schottky | - | Schottky |
Basis Produktnummer | SS12P2 | SS12 | - | SS12P4 |
Package / Case | TO-277, 3-PowerDFN | DO-214AC, SMA | DO-219AB | TO-277, 3-PowerDFN |
Aktuell - Reverse Leakage @ Vr | 1 mA @ 30 V | 200 µA @ 20 V | 400µA @ 20V | 800 µA @ 40 V |
Eroflueden SS12P2LHM3/86A PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir SS12P2LHM3/86A - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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