SS12HE3/61T Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - SS12HE3/61T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - SS12HE3/61T
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 500 mV @ 1 A | |
Voltage - DC Reverse (Vr) (Max) | 20 V | |
Technologie | Schottky | |
Supplier Device Package | DO-214AC (SMA) | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Package / Case | DO-214AC, SMA |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -65°C ~ 125°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 200 µA @ 20 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | SS12 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SS12HE3/61T | SS12P2L-M3/86A | SS12L R3G | SS12FP |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | TSC (Taiwan Semiconductor) | onsemi |
Serie | - | eSMP® | - | Automotive, AEC-Q101 |
Technologie | Schottky | Schottky | - | Schottky |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | Tape & Reel (TR) |
Basis Produktnummer | SS12 | SS12P2 | - | SS12 |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery = 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Supplier Device Package | DO-214AC (SMA) | TO-277A (SMPC) | Sub SMA | SOD-123HE |
Voltage - Viru (Vf) (Max) @ Wann | 500 mV @ 1 A | 560 mV @ 12 A | 450mV @ 1A | 450 mV @ 1 A |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Capacitance @ Vr, F. | - | 930pF @ 4V, 1MHz | - | 80pF @ 4V, 1MHz |
Package / Case | DO-214AC, SMA | TO-277, 3-PowerDFN | DO-219AB | SOD-123H |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 12A | 1A | 1A |
Aktuell - Reverse Leakage @ Vr | 200 µA @ 20 V | 1 mA @ 20 V | 400µA @ 20V | 400 µA @ 20 V |
Operatiounstemperatur - Junction | -65°C ~ 125°C | -55°C ~ 150°C | -55°C ~ 125°C | -55°C ~ 150°C |
Voltage - DC Reverse (Vr) (Max) | 20 V | 20 V | 20V | 20 V |
Eroflueden SS12HE3/61T PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir SS12HE3/61T - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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