MBR20H45CT-E3/45 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - MBR20H45CT-E3/45 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - MBR20H45CT-E3/45
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 630 mV @ 10 A | |
Voltage - DC Reverse (Vr) (Max) | 45 V | |
Technologie | Schottky | |
Supplier Device Package | TO-220-3 | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Package / Case | TO-220-3 |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -65°C ~ 175°C | |
Mounting Type | Through Hole | |
Diode Configuration | 1 Pair Common Cathode | |
Aktuell - Reverse Leakage @ Vr | 100 µA @ 45 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 10A | |
Basis Produktnummer | MBR20 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division MBR20H45CT-E3/45.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | MBR20H45CT-E3/45 | MBR20H200CT-E3/45 | MBR20H60CT-E3/45 | MBR20H150CTG |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | onsemi |
Voltage - Viru (Vf) (Max) @ Wann | 630 mV @ 10 A | 880 mV @ 10 A | 710 mV @ 10 A | 680 mV @ 10 A |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Voltage - DC Reverse (Vr) (Max) | 45 V | 200 V | 60 V | 150 V |
Aktuell - Reverse Leakage @ Vr | 100 µA @ 45 V | 5 µA @ 200 V | 100 µA @ 60 V | 50 µA @ 150 V |
Basis Produktnummer | MBR20 | MBR20 | MBR20 | MBR20H150 |
Package protegéieren | Tube | Tube | Tube | Tube |
Serie | - | - | - | SWITCHMODE™ |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220 |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 10A | 10A | 10A | 10A |
Technologie | Schottky | Schottky | Schottky | Schottky |
Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -20°C ~ 150°C |
Eroflueden MBR20H45CT-E3/45 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir MBR20H45CT-E3/45 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? ARA AAA A WED : Mir kontaktéieren Iech direkt.