MBR20L100CT Tech Spezifikatioune
Taiwan Semiconductor Corporation - MBR20L100CT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - MBR20L100CT
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Taiwan Semiconductor | |
Voltage - Viru (Vf) (Max) @ Wann | 850 mV @ 20 A | |
Voltage - DC Reverse (Vr) (Max) | 100 V | |
Technologie | Schottky | |
Supplier Device Package | TO-220AB | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Package / Case | TO-220-3 |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Through Hole | |
Diode Configuration | 1 Pair Common Cathode | |
Aktuell - Reverse Leakage @ Vr | 20 µA @ 100 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 20A | |
Basis Produktnummer | MBR20 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation MBR20L100CT.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | MBR20L100CT | MBR20L80CTG | MBR20H200CT | MBR20S100CTTU |
Hiersteller | Taiwan Semiconductor Corporation | onsemi | Taiwan Semiconductor Corporation | onsemi |
Voltage - Viru (Vf) (Max) @ Wann | 850 mV @ 20 A | 670 mV @ 10 A | 970 mV @ 20 A | 850 mV @ 20 A |
Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 20A | 10A | 20A | 20A |
Supplier Device Package | TO-220AB | TO-220 | TO-220AB | TO-220-3 |
Basis Produktnummer | MBR20 | MBR20L80 | MBR20 | MBR20S100 |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Technologie | Schottky | Schottky | Schottky | Schottky |
Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
Package protegéieren | Tube | Tube | Tube | Tube |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Serie | - | SWITCHMODE™ | - | - |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Voltage - DC Reverse (Vr) (Max) | 100 V | 80 V | 200 V | 100 V |
Aktuell - Reverse Leakage @ Vr | 20 µA @ 100 V | 500 µA @ 80 V | 5 µA @ 200 V | 100 µA @ 100 V |
Operatiounstemperatur - Junction | -55°C ~ 150°C | -20°C ~ 150°C | -55°C ~ 175°C | -65°C ~ 150°C |
Eroflueden MBR20L100CT PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir MBR20L100CT - Taiwan Semiconductor Corporation.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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